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VS2301BC - P-Channel Advanced Power MOSFET

General Description

VS2301BC designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Key Features

  • Ron(typ. )=95 mΩ.
  • Low On-Resistance.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Lead-Free, RoHS Compliant VS2301BC -20V/-1.8A P-Channel Advanced Power MOSFET.

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Datasheet Details

Part number VS2301BC
Manufacturer Vanguard Semiconductor
File Size 183.71 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS2301BC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features ♦Ron(typ.)=95 mΩ ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, RoHS Compliant VS2301BC -20V/-1.8A P-Channel Advanced Power MOSFET Description VS2301BC designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.