VG2617405FJ - CMOS DRAM

Product Overview

Vanguard International Semiconductor

Part number	VG2617405FJ
Manufacturer	Vanguard InterNational Semiconductor
File Size	549.54 KB
Description	CMOS DRAM
Datasheet	VG2617405FJ Datasheet
Additional preview pages of the VG2617405FJ datasheet.

The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode.

It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply.

Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply.
High speed tRAC acess time: 50/60ns.
Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas).
Extended - data - out(EDO) page mode access.
I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) DataSheet4U. com.
2048 refresh cycle in 32 ms(Std. ) or 128 ms(S-version).

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Published: Sep 12, 2006 |