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VG2617405FJ

Manufacturer: Vanguard International Semiconductor
VG2617405FJ datasheet preview

Datasheet Details

Part number VG2617405FJ
Datasheet VG2617405FJ_VanguardInternationalSemiconductor.pdf
File Size 549.54 KB
Manufacturer Vanguard International Semiconductor
Description CMOS DRAM
VG2617405FJ page 2 VG2617405FJ page 3

VG2617405FJ Overview

VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application.

VG2617405FJ Key Features

  • Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply
  • High speed tRAC acess time: 50/60ns
  • Low power dissipation
  • Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas)
  • Extended
  • out(EDO) page mode access
  • I/O level: TTL patible (Vcc = 5V) LVTTL patible (Vcc = 3.3V)
  • 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
  • 4 refresh modesh
  • RAS only refresh

VG2617405F from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Vanguard Microelectronics Limited Logo VG2617405F CMOS DRAM Vanguard Microelectronics Limited
Vanguard Microelectronics Limited Logo VG2617405 CMOS DRAM Vanguard Microelectronics Limited
Vanguard International Semiconductor logo - Manufacturer

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