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P2N04L03 - N-Channel 40V MOSFET

Features

  • Trench power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested D Top View S D G G S N-Channel MOSFET.

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Datasheet Details

Part number P2N04L03
Manufacturer VBsemi
File Size 240.51 KB
Description N-Channel 40V MOSFET
Datasheet download datasheet P2N04L03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P2N04L03-VB P2N04L03-VB Datasheet N-Channel 40 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package 40 0.0015 200 Single TO-263-7L TO-263 7-Lead FEATURES • Trench power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested D Top View S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
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