• Part: P2N2222A
  • Description: NPN Silicon Amplifier Transistors
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 194.65 KB
Download P2N2222A Datasheet PDF
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P2N2222A
Features - These are Pb- Free Devices- MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector - Emitter Voltage VCEO Collector - Base Voltage VCBO Emitter- Base Voltage VEBO Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Unit Vdc Vdc Vdc m Adc m W m W/°C Total Device Dissipation @ TC = 25°C Derate above 25°C 12 m W/°C Operating and Storage Junction Temperature Range TJ, Tstg - 55 to °C +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Rq JA 200 °C/W Thermal Resistance, Junction to Case Rq JC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. http://onsemi. COLLECTOR...