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NTE4153NT1G - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg tested.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE4153NT1G NTE4153NT1G Datasheet www.VBsemi.com N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.85 0.70 Qg (TYP.) 1.