UF3SC120009K4S Datasheet, UnitedSiC

1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 8.6mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low i.

Part Number UF3SC120009K4S Package TO-247-4L Marking UF3SC120009K4S w EV charging w PV inverters w Switch mode power.

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “dr.