w Typical on-resistance RDS(on),typ of 34mW w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD prot.

Part Number UF3SC065030D8S Package DFN8X8-4L Marking UF3SC065030D8S w EV charging w PV inverters w Switch mode power.

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “dr.

UF3SC065007K4S

UF3SC065040D8S

UF3SC120009K4S

UF3SC120016K3S

UF300

UF3001

UF3001-G

UF3001G

UF3002

UF3002-G

UF3002G

UF3003

UF3003-G

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