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UF3N170400B7S - SiC Normally-on JFET

Description

UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Features

  • w Typical on-resistance RDS(on),typ of 400mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Part Number UF3N170400B7S Package D2PAK-7L Marking UF3N170400B7S Typical.

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Datasheet Details

Part number UF3N170400B7S
Manufacturer UnitedSiC
File Size 795.68 KB
Description SiC Normally-on JFET
Datasheet download datasheet UF3N170400B7S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UF3N170400B7S Silicon Carbide (SiC) JFET EliteSiC, Power N-Channel, D2PAK-7L, 1700 V, 400 mohm Rev. C, January 2025 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
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