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UF3N120007K4S - SiC JFET

General Description

Gen 3 Normally-On SiC JFET Transistor.

Key Features

  • Single Digit On-Resistance.
  • Operating Temperature: 175 C (Max).
  • High Pulse Current Capability.
  • Excellent Device Robustness.
  • Silver-Sintered Die Attach for Excellent Thermal Resistance.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-4, 1200 V, 7.1 mohm UF3N120007K4S Description onsemi’s UF3N120007K4S is a 1200 V, 7.1 mW High-Performance Gen 3 Normally-On SiC JFET Transistor. This device exhibits Ultra-low On resistance (RDS(ON)) in a TO247-4 Package, making it an ideal fit to address the Challenging Thermal Constraints of Solid-state Circuit Breakers and Relay Applications. Additionally, the JFET is a Robust Device Technology Capable of the High-Energy Switching Required in Circuit Protection Applications.