CHA6517 amplifier equivalent, 6 - 18 ghz high power amplifier.
0.25 µm Power pHEMT Technology 6
– 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent.
This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air.
The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To si.
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