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CHA6005-99F High Power Amplifier

CHA6005-99F Description

CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC .
The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.

CHA6005-99F Features

* High power : 32.5dBm
* High PAE : 38%
* Frequency band : 8-12GHz
* Linear gain : 22dB
* DC bias: Vd=8Volt@Id=350mA
* Chip size 3.0x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350

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High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA6005-99F-like datasheet