Part CHA6005-99F
Description High Power Amplifier
Manufacturer United Monolithic Semiconductors
Size 235.67 KB
United Monolithic Semiconductors
CHA6005-99F

Overview

The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from defense to commercial communication systems.

  • High power : 32.5dBm
  • High PAE : 38%
  • Frequency band : 8-12GHz
  • Linear gain : 22dB
  • DC bias: Vd=8Volt@Id=350mA
  • Chip size 3.0x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350 22 300 20 250 18 200 8
  • 5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range G Linear Gain P3dB Output Power @ 3dB comp. PAE Power Added Efficiency @ 3dB comp. Min Typ Max Unit 8 12 GHz 20 22 dB 30 32.5 dBm 38 % Ref. : DSCHA60051084 - 25 Mar 21 1/10