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CHA6005-99F - High Power Amplifier

Description

The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%.

It is designed for a wide range of applications, from defense to commercial communication systems.

Features

  • High power : 32.5dBm.
  • High PAE : 38%.
  • Frequency band : 8-12GHz.
  • Linear gain : 22dB.
  • DC bias: Vd=8Volt@Id=350mA.
  • Chip size 3.0x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350 22 300 20 250 18 200 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range G Linear Gain P3dB Output Power @ 3d.

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Datasheet Details

Part number CHA6005-99F
Manufacturer United Monolithic Semiconductors
File Size 235.67 KB
Description High Power Amplifier
Datasheet download datasheet CHA6005-99F Datasheet

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Full PDF Text Transcription

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CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from defense to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ High power : 32.5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC bias: Vd=8Volt@Id=350mA ■ Chip size 3.0x1.5x0.
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