CHA6005-99F microwave equivalent, gaas monolithic microwave.
* High power : 32.5dBm
* High PAE : 38%
* Frequency band : 8-12GHz
* Linear gain : 22dB
* DC bias: Vd=8Volt@Id=350mA
* Chip size 3x1.5x0.1mm
34 6.
from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length.
The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from military to commerci.
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