CHA3666 microwave equivalent, gaas monolithic microwave.
24,0
* Broadband performance 6-17GHz
* 1.8dB noise figure
* 26dBm 3rd order intercept point
* 17dBm power at 1dB compression
* 21dB gain
22,0 20,0 .
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier.
VD1
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
RF.
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