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CHA3660-QQG - 21-27.5GHz Medium Power Amplifier

Description

The CHA3660-QQG is a 3 stage monolithic medium power amplifier, which produces 25dB gain for 19dBm output power.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • Broadband performances: 21-27.5GHz.
  • 19dBm Pout at 1dB compression.
  • 25dB gain.
  • 30dBm OTOI.
  • DC bias: Vd= 4.0V, Id= 180mA.
  • 16L-QFN4x4 (QQG).
  • MSL1 Output power (dBm), PAE (%) Output Power & PAE versus Frequency 30 28 26 24 22 20 18 16 14 Psat P-1dB PAE sat 12 10 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 28 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range.

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Datasheet Details

Part number CHA3660-QQG
Manufacturer United Monolithic Semiconductors
File Size 643.61 KB
Description 21-27.5GHz Medium Power Amplifier
Datasheet download datasheet CHA3660-QQG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3660-QQG 21-27.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3660-QQG is a 3 stage monolithic medium power amplifier, which produces 25dB gain for 19dBm output power. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS A3660 YYWW Main Features ■ Broadband performances: 21-27.5GHz ■ 19dBm Pout at 1dB compression ■ 25dB gain ■ 30dBm OTOI ■ DC bias: Vd= 4.