CHA3512 microwave equivalent, gaas monolithic microwave.
* Performances: 6-18GHz
* 23dBm saturated output power
* 16dB gain
* 1 bit attenuator for 20dB dynamic range
* DC power consumption: 210mA @ 4.5V
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The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufa.
The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded.
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