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CHA3512 - GaAs Monolithic Microwave

Description

The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Features

  • Performances: 6-18GHz.
  • 23dBm saturated output power.
  • 16dB gain.
  • 1 bit attenuator for 20dB dynamic range.
  • DC power consumption: 210mA @ 4.5V.
  • Chip size: 4.27 x 2.46 x 0.1mm 0dB state 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 16 dB Psat Saturated Output power @ Attenuator state 0.

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Datasheet Details

Part number CHA3512
Manufacturer United Monolithic Semiconductors
File Size 356.24 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA3512 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Performances: 6-18GHz ■ 23dBm saturated output power ■ 16dB gain ■ 1 bit attenuator for 20dB dynamic range ■ DC power consumption: 210mA @ 4.5V ■ Chip size: 4.27 x 2.46 x 0.
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