UTT40N08 mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 45mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL
2.Drain
Power MOSFET
1.Gate.
The UTT40N08 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
* FEATURES
* RDS(ON) < 45mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fas.
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