UTT40N03 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 17 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 23 mΩ @ VGS=4.5V, ID=16A
* Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
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The UTT40N03 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
1 TO-251
1 TO-252
* FEATURES
* RDS(ON) ≤ 17 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 23 mΩ @ V.
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