50N06-F mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability
1 TO-220
1 TO-251
1 TO-263
1 TO-252
* .
The UTC 50N06-F is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic b.
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