50N06-Q mosfet equivalent, 60v n-channel power mosfet.
* RDS(ON) ≤ 27 mΩ @ VGS=10V, ID=25A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
* O.
of switching power supplies and adaptors.
* FEATURES
* RDS(ON) ≤ 27 mΩ @ VGS=10V, ID=25A * Fast switching capability.
The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed s.
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