4N65-Q datasheet, mosfet equivalent, Unisonic Technologies

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Features and benefits

* RDS(ON) ≤ 3.1 Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness Power MOSFET
* SYMBOL ww.

Application

including power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
* FEATURES * R.

Description

The UTC 4N65-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high sp.

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