* RDS(ON) ≤ 2.6 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness Power MOSFET
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of switching power supplies and adaptors.
* FEATURES * RDS(ON) ≤ 2.6 Ω @ VGS=10V, ID=2.0A * Fast switching capabilit.

The UTC 4N65-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET.

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