4N60Z-E mosfet equivalent, n-channel power mosfet.
* RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
* SYMBOL
Power MOSFET
* .
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON)=.
The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used a.
Image gallery
TAGS
Download (Size : 202.30KB)