2N7002T mosfet equivalent, n-channel power mosfet.
* High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability
* SYMBOL
Power MOSFET.
* FEATURES
* High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliab.
The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* High Density Cell Design for Low RD.
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