10N70-Q mosfet equivalent, n-channel power mosfet.
* RDS(ON) =1.2Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
* SYMBOL.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
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* FEATURES
* RD.
The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu.
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