10N70Z mosfet equivalent, 10a 700v n-channel power mosfet.
* RDS(ON) =1.2Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
*
SYMB.
in power supplies, PWM motor co ntrols, high effi cient DC to DC converters a nd bridge circuits.
*
FEATURES
* RD.
Power MOSFET
The UT C 10N70Z is a high voltage and high curr ent po wer MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and have a high ru gged avala nche ch aracteristics. T.
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