10N60K-MT mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 0.75Ω @ VGS =10V, ID = 5.0A * Low Crss ( typical 7 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
* SYMBOL
1 TO-220
1 TO-220F
.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usuall.
Image gallery
TAGS
Download (Size : 337.52KB)