10N60 - N-Channel Mosfet Transistor

Datasheet Summary

Features

Drain Current.
ID= 9.5A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max).
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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Datasheet Details

Part number	10N60
Manufacturer	Inchange Semiconductor
File Size	232.75 KB
Description	N-Channel Mosfet Transistor
Datasheet	10N60 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.73Ω(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9.5 A IDM Drain Current-Single Plused 38 A PD Total Dissipation @TC=25℃ 156 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.

Published: Jul 14, 2016 |