UTD452 datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL 2.Drain Lea.

Application

* FEATURES * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching.

Description

The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON).

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