UTD36N03 - N-CHANNEL ENHANCEMENT MODE Power MOSFET

Unisonic Technologies

Key Features

S.
RDS(ON) < 17mΩ @VGS = 10 V.
Low capacitance.
Optimized gate charge.
Fast switching capability.
Avalanche energy specified.
SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

UTD36N03 n-channel enhancement mode power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	UTD36N03
Manufacturer	Unisonic Technologies
File Size	282.46 KB
Description	N-CHANNEL ENHANCEMENT MODE Power MOSFET
Datasheet	UTD36N03 Datasheet

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UNISONIC TECHNOLOGIES CO., LTD UTD36N03 N-CHANNEL ENHANCEMENT MODE  FEATURES * RDS(ON) < 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD36N03L-TA3-T UTD36N03G-TA3-T UTD36N03L-TN3-T UTD36N03G-TN3-T UTD36N03L-TN3-R UTD36N03G-TN3-R Package TO-220 TO-252 TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-179.