UT3N01Z mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 2.0Ω @ VGS=4V, ID=80mA RDS(ON) ≤ 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) ≤ 12.8Ω @ VGS=1.5V, ID=10mA
* Ultra low gate charge ( typical 5 nC ) * Low reverse transfer .
* DESCRIPTION
The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation w.
The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.
* FEATURES
* RDS(ON) ≤ 2.0Ω @ VGS=4V, ID=80mA RDS(ON).
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