Datasheet4U Logo Datasheet4U.com

UT3N06-Q - 60V N-CHANNEL POWER MOSFET

Description

The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance.

It has high efficiency and perfect cost-effectiveness.

It can be generally applied in the commercial and industrial fields.

Features

  • S.
  • RDS(ON) ≤ 110 mΩ @ VGS=10V, ID=3.0A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=2.0A.
  • Simple drive requirement.
  • SYMBOL Drain 2 1 SOT-23-3 (JEDEC TO-236) 2 1 SOT-23 (EIAJ SC-59) 1 SOT-89 Gate Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UT3N06 N-CHANNEL MOSFET Unisonic Technologies
UT3N06G-AE3-R N-Channel MOSFET VBsemi
UT3005 STANDARD RECOVERY RECTIFIERS Digitron Semiconductors
UT3005 Standard Recovery Rectifiers Microsemi
UT3006 N-Channel Power MOSFET Unisonic Technologies

Other Datasheets by Unisonic Technologies

Part Number Description
UT3N01Z N-CHANNEL MOSFET
UT3N10 N-CHANNEL MOSFET
UT3NN10 DUAL N-CHANNEL MOSFET
UT3NP06 N-CHANNEL / P-CHANNEL Power MOSFET
UT3008-H P-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UT3N06-Q 3.0A, 60V N-CHANNEL POWER MOSFET 3 Power MOSFET 3  DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * RDS(ON) ≤ 110 mΩ @ VGS=10V, ID=3.0A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=2.
Published: |