Download UT3N06-Q Datasheet PDF
UT3N06-Q page 2
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UT3N06-Q page 3
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UT3N06-Q Description

The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the mercial and industrial fields.

UT3N06-Q Key Features

  • RDS(ON) ≤ 110 mΩ @ VGS=10V, ID=3.0A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=2.0A
  • Simple drive requirement
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING