UT2N20 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 625 mΩ @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Drain
Gate
Source
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of switching power supplies and adaptors.
* FEATURES
* RDS(ON) ≤ 625 mΩ @ VGS=10V, ID=1.0A * Fast switching capabili.
The UTC UT2N20 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET .
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