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UT2N10 - N-CHANNEL POWER MOSFET

General Description

The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages.

Key Features

  • S.
  • RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • SYMBOL Drain Power MOSFET Gate Source www. unisonic. com. tw Copyright © 2022 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-511.J UT2N10.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UT2N10 2.0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages. The UTC UT2N10 is universally applied in logic level (5V) driving sources, such as automotive switching, solenoid drivers and programmable controllers.  FEATURES * RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.