UFU520Y transistor equivalent, dual npn wideband silicon rf transistor.
* Low noise, high breakdown RF transistor * Minimum noise figure (NFmin) = 0.65dB at 900 MHz * Maximum stable gain 19dB at 900 MHz * 11GHz fT silicon technology
* EQU.
in a plastic.
The UTC UFU520Y suitable for small signal to medium power applications up to 2 GHz.
* FEATURES
* Low n.
The UTC UFU520Y are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic.
The UTC UFU520Y suitable for small signal to medium power applications up to 2 GHz.
* FEATURES
* Low noise, high breakdown RF transistor * Min.
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