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UFU520 Datasheet, UTC

UFU520 transistor equivalent, dual npn wideband silicon rf transistor.

UFU520 Avg. rating / M : 1.0 rating-12

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UFU520 Datasheet

Features and benefits

* Low noise, high breakdown RF transistor * Minimum noise figure (NF min) = 0.65dB at 900 MHz * Maximum stable gain 19dB at 900 MHz * 11GHz fT silicon technology
* E.

Application

in a plastic. The UTC UFU520 suitable for small signal to medium power applications up to 2 GHz.
* FEATURES * Low n.

Description

The UTC UFU520 are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic. The UTC UFU520 suitable for small signal to medium power applications up to 2 GHz.
* FEATURES * Low noise, high breakdown RF transistor * Mini.

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TAGS

UFU520
DUAL
NPN
WIDEBAND
SILICON
TRANSISTOR
UFU520Y
UF-1006
UF05N25
UTC

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