F30NM65 mosfet equivalent, 650v n-channel mosfet.
* RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching .
such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
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The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode. is designed high voltage, high speed power switching applications such. such as fast switching time, low gate charge, low on-state resistance and high rug.
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