F30NM60 mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * High Switching Speed * 100% Avalanche Tested
* SYMBOL
(2) Drain
(5) Drain
Power MOSFET
.
* FEATURES
* RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * High Switching Speed * 100% .
The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged aval.
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