* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast body diode MOSFET technology * Ultra Low gate charge (typical 16nC) * Fast switching capability * Avalanche energy specified *.

such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance .

The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate ch.

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