F2N60 - 2A 600V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤4.5Ω).
Low Gate Charge(Typ:8nC).
Low Reverse Transfer Capacitances(Typ:3.8pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test TO-220C TO-220F TO-262 3.

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F2N60 2a 600v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	F2N60
Manufacturer	ROUM
File Size	1.42 MB
Description	2A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	F2N60 Datasheet

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2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 4.0Ω ID = 2A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. 4 Electrical Characteristics 4.