logo

3N180-E3 Datasheet, UTC

3N180-E3 mosfet equivalent, 1800v n-channel power mosfet.

3N180-E3 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 287.57KB)

3N180-E3 Datasheet
3N180-E3 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 287.57KB)

3N180-E3 Datasheet

Features and benefits

* RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Rugge.

Application


* FEATURES0 * RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * .

Description

The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES0 * RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Ca.

Image gallery

3N180-E3 Page 1 3N180-E3 Page 2 3N180-E3 Page 3

TAGS

3N180-E3
1800V
N-CHANNEL
POWER
MOSFET
UTC

Manufacturer


UTC

Related datasheet

3N187

3N188

3N189

3N100E

3N1012

3N10L26

3N120-E3

3N124

3N125

3N126

3N128

3N140

3N142

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts