3N180-E3 datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Rugge.

Application

* FEATURES0 * RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * .

Description

The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES0 * RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Ca.

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