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3N120-E3 Datasheet, UTC

3N120-E3 mosfet equivalent, 1200v n-channel power mosfet.

3N120-E3 Avg. rating / M : 1.0 rating-14

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3N120-E3 Datasheet

Features and benefits

* RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Rugged.

Application


* FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * A.

Description

The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Cap.

Image gallery

3N120-E3 Page 1 3N120-E3 Page 2 3N120-E3 Page 3

TAGS

3N120-E3
1200V
N-CHANNEL
POWER
MOSFET
UTC

Manufacturer


UTC

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