12N70-MH mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 1.1 Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
* .
of switching power supplies and adaptors.
* FEATURES
* RDS(ON) ≤ 1.1 Ω @ VGS=10V, ID=6.0A * Fast switching capabilit.
The UTC 12N70-MH is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFE.
Image gallery
TAGS
Download (Size : 594.02KB)