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Unisonic Technologies

12N70 Datasheet Preview

12N70 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
12N70
12 Amps, 700 Volts
N-CHANNEL MOSFET
„ DESCRIPTION
The UTC 12N70 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
„ FEATURES
* RDS(ON) = 0.87@VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Note:
Ordering Number
Lead Free Plating
Halogen Free
12N70L-TA3-T
12N70G-TA3-T
12N70L-TF1-T
12N70G-TF1-T
12N70L-TF3-T
12N70G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
www.DataSheet4U.com
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
12 3
GD S
GD S
GD S
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-220.C




Unisonic Technologies

12N70 Datasheet Preview

12N70 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

12N70
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 700 V
VGSS ±30 V
Avalanche Current (Note 2)
IAR 12 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
12 A
48 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
EAS
EAR
dv/dt
790 mJ
24 mJ
4.5 V/ns
Power Dissipation
TO-220
TO-220F/TO-220F1
PD
225 °C/W
51 °C/W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
SYMBOL
θJA
θJC
RATING
62.5
0.56
2.43
UNIT
°C/W
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250 μA
VDS = 700 V, VGS = 0 V
VGS = ±30 V, VDS = 0 V
BVDSS/TJ ID = 250 μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
www.DatGaaShtee-eSto4Uur.cceomCharge
Gate-Drain Charge
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6.0A
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 300V, ID = 12A, RG = 25
(Note 1, 2)
VDS= 480V,ID= 12A, VGS= 10 V
(Note 1, 2)
MIN TYP MAX UNIT
700 V
10 μA
±100 nA
0.7 V/°C
2.0 4.0 V
0.87 1.0
1480 1900 pF
200 270 pF
25 35 pF
30 70
115 240
95 200
85 180
42 54
8.6
21
ns
ns
ns
ns
nC
nC
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-220.C


Part Number 12N70
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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