12N60-C mosfet equivalent, n-channel mosfet.
* RDS(ON) < 0.7 Ω @ VGS = 10 V, ID = 6.0 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
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of switching power supplies and adaptors.
* FEATURES
* RDS(ON) < 0.7 Ω @ VGS = 10 V, ID = 6.0 A * Fast switching cap.
The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed s.
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