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12N60 - 600V N-Channel MOSFET

Description

This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information PART NUMBER.

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Datasheet Details

Part number 12N60
Manufacturer GFD
File Size 858.45 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet 12N60 Datasheet

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Part Number Description
12N60F 600V N-Channel MOSFET

Full PDF Text Transcription

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 12N60/12N60F VDSS RDS(ON) ID 600V 0.65Ω 12A Features •12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V • Low gate charge ( typical 52nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 12N60/12N60F TO-220/220F 0GFD www.goford.
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