12N60 Datasheet - GFD

12N60 600V N-Channel MOSFET

This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suite.

12N60 Features

* 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V

* Low gate charge ( typical 52nC)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 12N60/12N60F TO-220/220F 0GFD www.goford.cn TEL：0755-86350980 FAX：07

12N60-GFD.pdf