600V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using
advanced planar stripe DMOS
technology.This advanced technology has
been especially tailored tominimize on-state
resistance, provide superior switching
performance, and withstand high energy
pulse in the avalanche and commutation
mode. These devices are well suited for high
efficiency switched mode power supplies,
active power factor correction based on half
bridge topology.
12N60/12N60F
VDSS RDS(ON)
ID
600V 0.65Ω
12A
Features
•12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 52nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
12N60/12N60F TO-220/220F 0GFD
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