10N65Z mosfet equivalent, 10a 650v n-channel power mosfet.
* RDS(ON) =0.95Ω@ VGS=10V, ID=4.75A * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
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in power supplies, PWM motor co ntrols, h igh efficient D C to D C converters and b ridge circuits.
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FEATURES
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Power MOSFET
The UT C 10N 65Z is a high voltag e a nd high curre nt p ower MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av alanche char acteristics. This.
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