10N60Z mosfet equivalent, 10a 600v n-channel power mosfet.
* RDS(ON) = 0.75Ω@VGS =10V * Low gate charge ( typical 44nC) * Low CRSS ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
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SYM.
Power MOSFET
The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer MOSFET, designe d to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. T.
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