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PZ513BA Datasheet Preview

PZ513BA Datasheet

P-Channel Enhancement Mode MOSFET

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PZ513BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.5V
ID
-1.3A
SOT-323
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-1.3
-1
-10
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.3
0.2
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
360
1limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
°C / W
REV 1.0 1 2015/6/8




UNIKC

PZ513BA Datasheet Preview

PZ513BA Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

PZ513BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
-20
-0.3 -0.65 -1
±100
V
nA
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 70 °C
-1
mA
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -1.8V, ID = -1A
VGS = -2.5V, ID = -1A
VGS = -4.5V, ID = -1.3A
VDS = -5V, ID = -1.3A
141 190
116 130
97 115
7
S
DYNAMIC
Input Capacitance
Ciss
414
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz 47 pF
Reverse Transfer Capacitance
Crss
36
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=-4.5V)
Qg(VGS=-2.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10V,
ID = -1.3A, VGS = -4.5V
VDS = -10V, ID @ -1.3A,
VGS = -4.5V, RGEN = 6Ω
4.9
3
nC
0.6
1.3
9.4
38
nS
60
66
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1.3A, VGS = 0V
-0.25
-1.2
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -1.3A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
8 nS
3 nC
2Independent of operating temperature.
REV 1.0 2 2015/6/8


Part Number PZ513BA
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
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