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PW5D8EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V
300mΩ @VGS = 4.5V
ID 0.8A
SOT-723
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±10
Continuous Drain Current2 Pulsed Drain Current1
TA = 25 °C
ID
TA = 70 °C
IDM
0.8 0.62 2.4
Power Dissipation
TA = 25 °C
PD
0.3
TA= 70 °C
0.2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS
400
°C / W
Rev 1.
PW5D8EA Datasheet
