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PW567EA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
520mΩ @VGS = -4.5V
ID -0.5A
SOT-723
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±12
Continuous Drain Current2 Pulsed Drain Current1
TA = 25 °C
ID
-0.5
TA = 70 °C
-0.4
IDM
-1
Power Dissipation
TA = 25 °C
PD
TA= 70 °C
0.25 0.16
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS
500
°C / W
Rev 1.
PW567EA Datasheet
