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PE5E4BA Datasheet Preview

PE5E4BA Datasheet

N-Channel Enhancement Mode MOSFET

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PE5E4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID
31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±25
Continuous Drain Current3
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
31
19
90
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
10
8
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24
TC = 25 °C
18
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
7
1.7
TA = 70 °C
1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Steady-State
RqJA
70
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 27A.
UNITS
°C / W
REV 1.0
1 2016/12/16




UNIKC

PE5E4BA Datasheet Preview

PE5E4BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE5E4BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
30
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
1.3 2
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 8.8A
VGS = 10V, ID = 10A
VDS = 5V, ID = 10A
14.3
7.5
28
DYNAMIC
Input Capacitance
Ciss
530
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
160
Reverse Transfer Capacitance
Crss
90
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V , VGS = 10V,
ID = 10A
VDS= 15V, ID @ 10A,
VGS = 10V, RGEN= 6Ω
12
6.7
1.5
4.3
18
16
35
17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
15
5
2Independent of operating temperature.
2.3
±100
1
10
17
9.5
15
1.2
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2016/12/16


Part Number PE5E4BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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